NakuLaser Blog

1457nm 500mw Laser with Single-mode Fiber For Raman Amplifier Pump Single mode fiber output 1457nm semiconductor laser light source using high-performance butterfly semiconductor laser, single mode pigtail output. Using professionally designed drive circuits and TEC control to ensure laser safety and stability. This laser can be used in scientific experiments and production tests,and is suitable as a pump light source for fiber Raman amplifiers.

EDFA  Erbium doped fiber amplifier module type control by software Erbium doped fiber amplifier (EDFA) is a high performance, small size of the fiber amplifier products. The internal use of stability   high power semiconductor laser , the high stability of WDM, isolator, and high gain erbium-doped fiber. The product has the advantages of high reliability, high power output, high gain and low noise. This is the ideal choice of high power EDFA system, this product uses 5V DC power supply, compact size, easy to integrate in the system to meet the needs of customers.

This is   808nm 4W fiber laser source  with LCD screen, can display current laser power and working current. The output power is adjusted by 5 buttons. The 808nm laser is a near-infrared laser, we can only see very small red dots.

808nm High power Pigtailed Laser diode + Multimode optial fiber + Drive circuit Fiber: Fiber Diameter 105μm / Numerical Aperture 0.22 / Fiber Connecter (FC/PC)

It’s a module type  Erbium doped fiber amplifier . It is preamplifier, used in the -40 ~ -25 dBm range of small light signal amplification, the gain is  45 dB . The power supply is DC 5V. It controled by PC software. CivilLaser can customize edfa according to customer needs.

If you are looking for a  laser light source, We recommend that you go to CivilLaser.com first. This is the most professional laser product sales platform we have found so far. A wide range of laser products, can also provide customized services. Professional service, fast response time. The price is cheap, the same function of the laser product, the price is only about 40%~60% of European and American suppliers. Fast delivery time,Traditional laser customization takes 2 months, CivilLaser only needs 2 weeks.

C-band  1533nm  5W SM Fiber Laser Source Output Power Adjustable Note:  1530nm~1565nm & 1W~5W can be customzied. The C-band high-power fiber-optic light source adopts a semiconductor-pumped fiber laser structure, which outputs 1~5 watt high-power laser, single-mode fiber  output, professionally designed drive circuit and TEC control to ensure laser safety and stability.

Abstract  The tunable single-frequency (SF) narrow-linewidth fiber laser with all-fiber complex cavity structure is designed, which is composed of an optical fiber tunable filter, a high-precision ring filter, and a fiber loop mirror. A 980-nm semiconductor laser is used as the pumping source, and the ytterbium-doped fiber is employed as the gain medium and saturable absorber, then a wide-spectrum tunable single-frequency narrow-linewidth laser output from 1030 nm to 1090 nm is successfully realized. When the pump power is up to 300 mW, the output power is 18.5 mW and the slope efficiency is 7.95% at the wavelength of 1070 nm. There is no mode hopping phenomenon within 1 h, and the standard deviation of power stability is less than 1 % . When the pump power is 200 mW, the linewidth is measured by the delay self-heterodyne method, and the average line width in the wavelength tuning range is 8.7 kHz, and the relaxation oscillation frequency is 64 kHz. I ntroduction Single-freq

Recently, the team of researchers of the State Key Laboratory of Superlattice, Institute of Semiconductors, Chinese Academy of Sciences, Niu Zhichuan has made significant progress in the research of single-mode  and high-power quantum well lasers for telluride semiconductors. In recent years, the research team led by Niu Zhichuan's research team has studied the material basis physics of the bismuth semiconductor and the heterogeneous low-dimensional material epitaxy under the support of the National 973 Major Scientific Research Program, the National Natural Science Foundation's major projects and key projects. The technology of growth and optoelectronic device preparation, systematically mastered the chemical analysis of bismuth telluride quantum wells, superlattice low-dimensional materials and molecular beam epitaxial growth methods, breaking through the etching and passivation of germanium quantum well lasers. Based on the core process technology, the innovative design o

It is reported that the University of California, San Diego (UCSD) researchers have developed a new laser material - Nd-doped alumina crystals, capable of emitting ultra-short (theoretically as low as 7.7 fs), high-power pulses, available For the production of smaller, more powerful lasers with excellent thermal shock resistance.To achieve this, engineers have devised a new material processing strategy to dissolve high concentrations of cerium ions into the alumina crystals. Finally, the first yttrium alumina laser gain medium in the field of laser materials research was produced. Nd (dopant) and alumina (host material) are the two most widely used components of today's most advanced solid-state laser materials. However, combining Nd and alumina to prepare laser media presents a major challenge: their size is incompatible. Alumina crystals usually contain small ions such as titanium or chromium, while Nd ions are too bulky. The key to preparing a cerium alumina mixture

  Abstract:   In recent years ,   the application of high-power semiconductor lasers has been expanding , and they are more and more widely used in industry and medical treatment. The thermal characteristics of lasers seriously restrict their reliability and service life. In order to improve the reliability and prolong the service life of the device , high power semiconductor laser bars with different solders , different thickness of solders and different thickness of WCu heat sink packages were simulated by COMSOL Multiphysics , and the "Smile" values of laser bars under different packaging conditions were measured. The results show that the maximum thermal stress of in solder or AuSn solder occurs at the interface between WCu secondary heat sink and Cu heat sink ;  the thermal stress of laser chips packaged with the same thickness of In solder and AuSn solder is 3.57 GPa and 3.83 GPa respectively , and the peak spectra are 800.5 and 798 nm, respectively. ;  reducing the th